n- channel 75- v ( d-s ) mosfet ME75N75T / ME75N75T-g 01 apr , 2010- v e r 1.0 parameter symbol limit unit drain-source voltage v dss 75 v gate-source voltage v gss 25 v t c =25 93 continuous drain current* t c =70 i d 78 a pulsed drain current i dm 372 a t c =25 200 maximum power dissipation t c =70 p d 140 w operating junction and storage temperature range t j, t stg -55 to 175 thermal resistance-junction to case** r jc 0.75 /w pin configuration (to-220) top view absolute maximum ratings (t c =25 unless otherwise noted) e ordering information : ME75N75T (pb-free) ME75N75T-g (green product-halogen free) general description the ME75N75T is the n-channel logic enhancement mode power field effect transistors are produc ed using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. features r ds(on) Q 10m ? @v gs =10v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability applications power management dc/dc converter load switch * calculated continuous current based on maximum allowable j unction temperature. package limitation current is 80a. ** the device mounted on 1in 2 fr4 board with 2 oz copper. free datasheet http:///
n- channel 75- v ( d-s ) mosfet ME75N75T / ME75N75T-g 02 apr , 2010- v e r 1.0 symbol parameter limit min typ max unit static bv dss drain-source breakdown voltage v gs =0v, i d =250 a 75 v v gs(th) gate threshold voltage v ds =v gs , i d =250 a 2.0 4.0 v i gss gate-body leakage v ds =0v, v gs =25v 100 na i dss zero gate voltage drain current v ds =75v, v gs =0v 1 a r ds(on) drain-source on-resistance* v gs =10v, i d =40a 8 10 m v sd diode forward voltage * i s =40a, v gs =0v 0.9 1.2 v dynamic qg total gate charge v dd =60v, v gs =10v, i d =75a 112 qg total gate charge 28 qgs gate-source charge 27 qgd gate-drain charge v dd =60v, v gs =4.5v, i d =75a 30 nc rg gate resistance v ds =0v, v gs =0v, f=1mhz 0.9 c iss input capacitance 4900 c oss output capacitance 534 c rss reverse transfer capacitance v ds =20v, v gs =0v, f=1mhz 175 pf t d(on) turn-on delay time 48 t r turn-on rise time 36 t d(off) turn-off delay time 144 t f turn-off fall time v gs =10v, r l =15 v dd =30v, r g =10 48 ns notes: a. pulse test: pulse width Q 300us, duty cycle Q 2%, guaranteed by design, not subject to production testing. b. matsuki reserves the right to improve product design, functions and reliability without notice. electrical characteristics (t a =25 unless otherwise specified) free datasheet http:///
n- channel 75- v ( d-s ) mosfet ME75N75T / ME75N75T-g 03 apr , 2010- v e r 1.0 typical characteristics (t j =25 noted) free datasheet http:///
n- channel 75- v ( d-s ) mosfet ME75N75T / ME75N75T-g 04 apr , 2010- v e r 1.0 typical characteristics (t j =25 noted) free datasheet http:///
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